The resistivity and photoluminescence of single crystals annealed in liquid Zn at several temperatures have been studied. The change in resistivity with annealing temperature had a characteristic activation energy of 16 kcal/mole and was independent of the S:Se ratio suggesting that Zn is diffusing into the crystal. The photoluminescent spectra was not changed by annealing; however, the room temperature photoluminescence efficiency increased as Zn diffused in and decreased when Zn diffused out. It was concluded that diffused Zn only contributes to the resistivity and the thermal quenching centers. In addition it was found that excess iodine gave an additional yellow luminescent band centered at 2.23 eV (560 nm).
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Ozawa et al. (1973) studied this question.