The growth of InAsSbP‐based diode heterostructures with quantum dots as a new material for thermophotovoltaic application

In this paper we report our first efforts for the growth of InAsSbP‐based diode heterostructures with (and without) quantum dots on InAs (100) substrates as a new material for TPV application. For the fabrication of self‐assembled strain induced QDs and the growth of lattice matched quaternary InAsSbP emitter cap layer the conventional and “step‐cooling” versions of liquid phase epitaxy have been employed. The morphology, dimensions and distribution density of QDs were investigated by AFM technique. The average density of the QDs was equal (5–7)×109 cm–2, with dimensions of 0.7–12 nm in height and 20–80 nm in width. The investigations of cross‐sectional area of p‐n heterojunctions, morphology of layers surface and calculations of InAsPSb alloys composition have been carried out by SEM‐EDXA equipment. The current‐voltage characteristics, transmission spectra and optical response of n‐InAs/p‐InAs1–x–ySbxPy TPV cells were measured and investigated. The maximum photoresponse is observed near the wavelength of 3.4 μm, which corresponds to the optimum efficiency of TPV cells. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)