Tensile strained QW structure for low-threshold operation of short-wavelength AlGaInP LDs emitting in the 630nm band

The amount of tensile strain introduced into QWs and the optimum QW structure are evaluated for low-threshold operation of AlGaInP LDs in the wavelength range 630–640nm. Very low threshold current of 32mA under CW operation at 20°C is achieved in an index-guided SQW LD emitting at 632nm.