In this letter, we address the bipolar resistive switching phenomenology in scaled TiN 2 cells. By means of stack engineering using a thin Al 2 O 3 layer inserted either at the TiN 2 or at the Hf 2 interface, we demonstrate that the reset operation takes place close to the TiN anode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al 2 O 3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances.
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Goux et al. (2012) studied this question.