A novel device, sensitive to the magnetic field parallel to the chip surface is described. The device has a form remeniscent of a semi circular plate placed perpendicularly to the chip plane. The operation principle is that of the conventional Hall-effect device. The unusual geometry principally does not affect sensitivity. The experimental samples are fabricated using a standard bulk CMOS technology, where the p-well deep diffusion is used to surround the active device volume. Sensitivity up to 450 V/AT is measured.
No takes yet. Share an insight, caveat, or question.
R.S. Popović (1984) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: