The impact of body-thickness scaling on strain-induced carrier-mobility enhancement in thin-body CMOSFETs with high-k/metal gate stacks, based on quantum-mechanical simulations calibrated with measured data, is presented to provide insight into device performance enhancement trends for future technology nodes.
No takes yet. Share an insight, caveat, or question.
Xu et al. (2012) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: