A temperature stable low loss substrate based on 0.83ZnAl2O4–0.17TiO2 (ZAT) was developed as a substitute to Al2O3 for possible applications in microelectronic industry as substrates and packaging materials. The thermal conductivity of ZAT is 59Wm−1K−1 which is more than twice as that of Al2O3. The thermal-expansion coefficient of this dielectric is 6.3ppm∕°C which is comparable to that of silicon used in microelectronic circuitry. Furthermore, 0.83ZnAl2O4–0.17TiO2 dielectric is chemically inert with silicon, which increases its applicability in microelectronic packages.
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Surendran et al. (2005) studied this question.
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