Trapping of two different point defects produced by electron irradiation at ¹¹¹In probes is studied as a function of the Fermi level in germanium by perturbed angular correlation spectroscopy. The defects are identified as monovacancies and self-interstitials, respectively. An acceptor state for the vacancy at EV+0.20eV and, tentatively, a donor state for the interstitial close to the conduction band ( EC-0.040eV) is deduced from the trapping behavior. Long range migration of the neutral vacancy and the positive interstitial takes place at 200 and 220 K, respectively.
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Haesslein et al. (1998) studied this question.
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