III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding, Yokoyama, Masafumi, Kim, Sanghyeon, Zhang, Rui, Taoka, Noriyuki, Urabe, Yuji, Maeda, Tatsuro, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi