Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Norio Hirashita, Naoharu Sugiyama, Eiji Toyoda, Shin-ichi Takagi; Relaxation processes in strained Si layers on silicon-germanium- on-insulator substrates. Appl. Phys. Lett. 30 May 2005; 86 (22): 221923. https://doi.org/10.1063/1.1944208 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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Hirashita et al. (2005) studied this question.
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