Figure of merit of quaternary (Sb0.75Bi0.25)2−xInxTe3 single crystals

Single crystals of a quaternary system based on (Sb0.75Bi0.25)2Te3 doped with In were prepared using the Bridgman technique. Samples with varying contents of In were characterized by the measurements of electrical conductivity σ⊥c, Hall coefficient RH(B∥c), Seebeck coefficient S(ΔT⊥c), and thermal conductivity κ(ΔT⊥c). The measurements indicate that by incorporating In in (Sb0.75Bi0.25)2Te3 one lowers the concentration of free holes. This effect is explained in terms of a point defect model in the crystal lattice. We also discuss the temperature dependence of the thermoelectric figure of merit Z=σS2∕κ of the samples. It is observed that low concentrations of In atoms in the (Sb0.75Bi0.25)2Te3 crystal lattice result in a substantial increase in the parameter Z in the temperature region 100–300K.