The incorporation of metal nanocrystals (NCs) within TiO2‐x thin films offers great advantages for adjusting a wide range of non‐volatile memory properties, ranging from resistive and capacitive switching to synaptic capabilities. In this study, it is demonstrated that by inserting very small NCs (≈3 nm diameter) of either Pt or Ta, resistance changes over six orders of magnitude and capacitance changes over two orders of magnitude can be induced, with promising variability due to the local enhancement of the electric field effect, while these effects are attributed to the energy band diagram configuration induced by the presence of NCs. The gradual switching pattern observed exhibits also attractive synaptic properties, offering higher design flexibility for neuromorphic applications.
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Bousoulas et al. (2017) studied this question.
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