Characterization of 4H-SiC Lateral MOSFETs up to 773 K

Experimental analysis of 4H-SiC lateral MOSFETs characteristics up to 773K is shown. The reduction of threshold voltage, V TH , and the increase of the field effect channel mobility, µ CH , with temperature cause an increase of MOSFET current up to 623K. However, when scattering with lattice vibration starts to be predominant, µ CH decreases with an abrupt drop at 773K, reducing MOSFET current. Channel resistance, R CH , decreases with the temperature up to the range between 523 K and 573 K, implying possible thermal instability effects. However, when the temperature increases over this range, the thermal scattering predominates and R CH again increases, ensuring thermal stability of MOSFETs.