Solution-processed InNbO phototransistors with UV-induced self-patterning for high-detectivity photodetection

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Metal oxide phototransistors are characterized by advantageous features such as low dark current, high environmental stability, and high transparency. However, negligible attention has been paid for fabricating metal oxide phototransistors via solution-based methods and the ultraviolet (UV)-induced self-patterning method has not yet demonstrated for metal oxide phototransistors. Moreover, while magnetron-sputtered niobium-doped indium oxide (InNbO) phototransistors combine high mobility with high detectivity, their reliance on vacuum equipment remains a constraint. To the best of our knowledge, this is the first demonstration of UV-induced self-patterning for solution-processed InNbO phototransistors. The InNbO active layer with 5 at% Nb doping is prepared entirely by solution processing. The resulting phototransistors exhibit a saturation mobility of 1.12 cm 2 V −1 s −1 , a steep subthreshold swing of 0.19 V decade −1 , and a high on/off ratio of 2.97 × 10 7 . Notably, upon illumination with violet light, the phototransistors achieve a high specific detectivity of 1.9 × 10 13 Jones, which is superior to most solution-processed metal-oxide phototransistors without absorption layers reported in the literature, to the best of our knowledge. Furthermore, the phototransistors are successfully integrated as driving units for quantum-dot light-emitting diodes (red, green and blue), demonstrating their potential as a low-cost, high-performance backplane technology for large-area displays.