Van der Waals Hybrid‐Gate Reconfigurable Transistor Integrating Floating‐Gate Logic and Ferroelectric Synaptic Functions

This is the authors' abstract. We don't add key points for this paper.

Reconfigurable field‐effect transistors (R‐FETs) enable multifunctional hardware in which a single device performs several roles. Conventional R‐FETs, however, rely on a single gating mechanism, which forces a trade‐off between nonvolatile logic reconfiguration and analog synaptic operation. Here, we report a hybrid‐gate R‐FET that combines floating‐gate (FG) and ferroelectric (FE) operation within a single van der Waals gate stack of MoTe 2 , h ‐BN, and In 2 Se 3 . In the FG mode, stored charge strongly dopes the ambipolar MoTe 2 channel, giving stable reconfiguration among insulating, metallic, n‐FET, and p‐FET states. On this basis, the device reconfigures into inverter and switch operation and, through circuit‐level simulation, into six Boolean logic gates within one layout. In the FE mode, polarization switching modulates the channel conductance at low energy, yielding 6‐bit synaptic states over a dynamic range of about 100. A hardware‐level spiking neural network built on the experimentally measured synaptic characteristics reaches about 90% accuracy on the MNIST dataset in a MATLAB‐based simulation. The hybrid‐gate R‐FET thus provides a versatile device platform that integrates two distinct gating mechanisms and selectively exploits their respective advantages for reconfigurable logic and neuromorphic computing.