An Extended X-Ray-Absorption Fine-Structure Study of Bond Lengths in GaAs1-xPx

Extended X-ray-absorption fine-structure measurements were performed on GaAs1-x P x , a typical III-V-V type semiconductor alloy, with the composition x as a parameter. The results reveal that the Ga-As and Ga-P nearest-neighbor bond lengths differ, showing a tendency to retain their respective bond lengths in the binary compounds. This feature is similar to that found earlier in Ga1-x In x As, a III-III-V type alloy.