Nitride‐organic hybrid heterostructures for possible novel optoelectronic devices: charge injection and transport

We investigate the physical integration of organic thin film semiconductors with (In)GaN to explore new types of “hybrid” heterojunction device structures. Planar nitride‐organic junctions are found to be quite versatile in enabling charge injection across two very different electronic material constituents. Here (In)GaN/CuPc devices were studied in terms of photogenerated charge transport. An efficient photocurrent response was observed at the absorption wavelength of the InGaN quantum well which requires ready photo‐carrier transport across the organic/inorganic interface. Additionally a weaker photocurrent response from CuPc was acquired near its absorption peak around 640 nm, which suggests that some photo‐generated excitons are diffused and dissociated at the hybrid interface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)