High-Tc and high-Jc SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy

Superconducting thin films of SmFeAs(O,F) were prepared by molecular beam epitaxy on fluoride substrates. In our process, F-free SmFeAsO films were grown first, and F was subsequently introduced to the films by diffusion from an overlayer of SmF3. By this simple process, record high Tc, namely, Tcon (Tcend) = 57.8 K (56.4 K) was obtained in a film on CaF2. Furthermore, the films on CaF2 showed high critical current density over 1 MA/cm2 in the self-field at 5 K. The correlation between superconductivity and epitaxial strain in SmFeAs(O,F) films is discussed.