Reaction-dispersive proton transport model for negative bias temperature instabilities

Negative bias temperature instabilities in p-channel metal-oxide-semiconductor field effect transistors are modeled by taking into account the generation of Pb0 centers at the (100)Si∕SiO2 interface, followed by the dispersive transport of protons away from the interface. It is shown that the characteristic time, oxide electric field, and temperature dependence of the threshold voltage shifts observed in these devices can be very well reproduced by the model. The general belief that the transport of positively charged species cannot explain negative bias temperature instabilities thus appears to be incorrect.