A study of the strain field of grown-in dislocations in a silicon X-ray interferometer

A Laue case X-ray interferometer has been cut from a silicon single crystal. Two of the slices are dislocation-free. The third one contains slippages with about 60 dislocations emitted on two close slip planes during the final stage of crystal growth. The dislocations have been observed directly and their Burgers vector has been determined in X-ray topographs. Moiré patterns caused by the strain field of the slippages have been studied in interferograms made with Cu Kα and Mo Kα radiations. Some methods of evaluation of the strain field are demonstrated.