Hybrid quantum and nonlinear photonics with integrated III-nitride materials

III-nitride materials, including aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), and their alloys, exhibit exceptional electrical, optical, and acoustic properties, making them highly versatile and promising for hybrid information processing in both classical and quantum regime. This review provides an overview of their crystal structures, growth methods, electrical and optical characteristics, nonlinear optical phenomena, and piezoelectric interactions. We highlight recent advancements in integrated photonic devices based on these materials and discuss future prospects for hybrid quantum and nonlinear photonic systems.