Photoluminescence and photoelectron spectroscopic analysis of InGaAsN grown by metalorganic chemical vapor deposition

InGaAsN films and InGaAsN/GaAs quantum wells were grown by metalorganic chemical vapor deposition using 1,1-dimethylhydrazine and tetrirybutylarsice as N and As sources, respectively. A photoluminescence peak at 1.22 μm wavelength at low temperature was observed for the In0.26Ga0.74As1−yNy/GaAs quantum wells. X-ray photoelectron spectroscopy investigation on the InGaAsN films demonstrated the success of nitrogen incorporation and provided evidence of the existence of two principle N configurations, indicating the formation of N–In and N–O,H bonds. The addition of N atoms increases the In concentration in InGaAsN wafers, whereas postgrowth annealing results in In diffusion in surface region.