Hall coefficient and resistivity measurements on ZnSnSb2 grown from a Sn solution show the material to be degenerately doped p type with a carrier concentration of 1019−1021/cm3 depending on growth procedure. The optical absorption coefficient increases gradually over the range 0.4–1.0 eV with structure at 0.7 eV.
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W. C. Scott (1973) studied this question.
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