Magnetization-dependent rectification effect in a Ge-based magnetic heterojunction

We report a study of a promising Ge-based magnetic heterojunction diode composed of a CoMn-doped Ge film grown epitaxially on lightly doped n-type Ge (001) substrate. The current rectification of the diode can be controlled either by the bias voltage or by the magnetic field. The findings not only demonstrate the viability of producing fully electronic spin devices, but also provide relevant parameters for one type of devices that are compatible with current Si-based device technology.