We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semitransparent contact barriers, a dip of differential conductance $(dI/dV)$ has been observed at source-drain bias Vd=0, along with anomalies at higher Vd likely induced by optical-phonon scattering. For devices with low-contact barriers, only the $dI/dV$ dip at Vd=0 is observed, and we find a well-fit logarithmic dependence of $dI/dV$ on both the bias Vd and the temperature T. The logarithmic Vd dependence is explained with the hot electron effect and the logarithmic T dependence could be attributed to the weak localization in two dimensions.
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Lee et al. (2010) studied this question.
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