A dual self-aligned vertical multichannel organic transistor (DSA-VMCOT) is proposed and demonstrated. The layouts of the shadow gate and transparent source/drain are sequentially determined using dual back-surface exposure. Vertical 100-nm channel and multichannel structures are obtained using interdigital gate electrodes. This device concept is promising for use as a backplane with high current driving capability.
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Naruse et al. (2007) studied this question.
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