Low‐temperature joining of SiC ceramics using NITE phase with Al 2 O 3 ‐Ho 2 O 3 additive

In order to avoid the property degradation resulting from high‐temperature joining process, nano‐infiltrated transient eutectoid (NITE) phase with the Al 2 O 3 ‐Ho 2 O 3 as the joining adhesives was adopted to join silicon carbide (SiC) ceramics with the attempts to lower down the joining temperature. The liquid‐phase‐sintered silicon carbide (LPS‐SiC) specimens were joined at 1500‐1800°C by spark plasma sintering (SPS) under the pressure of 20 MPa. The results of the shear test and microstructure observation showed that the joining process could be finished at a relatively lower temperature (1700°C) compared to other NITE‐phase joining. In contrast to the shear strength of 186.4 MPa derived from the SiC substrate, the joint exhibited the shear strength of 157.8 MPa with the fully densified interlayer.