Epitaxial growth of high-quality graphene upon SiC is one of the most promising routes towards commercialization of this multipurpose wonder material. Bringing a technological perspective to the intense debate on improving this process, the authors correlate the chemical atmosphere in the growth chamber with the quality and physical properties of the product. Their experiments reveal surprisingly rich chemistry that must be taken into account to optimize the process. These results will benefit the engineering of industrial furnaces for the production of electronics-grade graphene.
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Rejhon et al. (2017) studied this question.
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