Protocol for lateral patterning of van der Waals heterostructures using sequential chemical vapor deposition

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Previous work demonstrates that scalable area-selective deposition of van der Waals monolayers enables tunable design of atomically thin electronic and photonic platforms. Here, we present a protocol for lateral patterning of MoS 2 –WS 2 heterostructures using sequential chemical vapor deposition. We describe steps for constructing patterned lateral heterostructures with alternating channels from nanometers to micrometers. This protocol has potential application in next-generation atomically thin electronic circuits. For complete details on the use and execution of this protocol, please refer to Lee et al. 1 • Steps to improve grain size for uniform TMDC monolayer growth using soda-lime glass • Instructions for e-beam lithography with dry transfer and plasma etching on TMDC • Procedures for selective filling on template enable lateral integration Publisher’s note: Undertaking any experimental protocol requires adherence to local institutional guidelines for laboratory safety and ethics. Previous work demonstrates that scalable area-selective deposition of van der Waals monolayers enables tunable design of atomically thin electronic and photonic platforms. Here, we present a protocol for lateral patterning of MoS 2 –WS 2 heterostructures using sequential chemical vapor deposition. We describe steps for constructing patterned lateral heterostructures with alternating channels from nanometers to micrometers. This protocol has potential application in next-generation atomically thin electronic circuits.