The effect of S source on BaZrS 3 crystallization at low temperatures: H 2 S vs. elemental S

S route decouples perovskite crystallization from the need for S-rich intermediate phases, while the directional beam creates a highly S-rich environment directly within the sputtering process. Both methods offer practical approaches to integrating these materials into optoelectronic devices by crystallizing films at 600 °C and potentially below, each with distinct advantages.