Zinc-blende-structured single-crystalline ZnSe nanowires and nanoribbons were grown on (001) silicon substrates by metal-organic chemical vapor deposition. The as-synthesized nanowires were characterized by x-ray powder diffraction and scanning electron microscopy. The diameters of the nanowires range from a few tens to 100 nm and the typical length is in the tens of micrometers. Individual strands of the nanowires were examined by transmission electron microscopy and cathodoluminescence spectroscopy. They were found to be single crystals elongated along the 〈112̄〉 crystallographic direction. Strong and narrow room-temperature band-gap light emissions indicate that their optical and electronic properties rival those of the epitaxial layers employed in diode lasers. A possible growth mechanism of the ZnSe nanowires is also discussed.
No takes yet. Share an insight, caveat, or question.
Zhang et al. (2003) studied this question.