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We have investigated spin-dependent transport in semiconductor narrow 2D channels and explored the possibility of suppressing spin relaxation. Our approach is based on a Monte Carlo transport model and incorporates information on conduction band electron spins and spin rotation mechanisms. Specifically, an ensemble of electrons experiencing multiple scattering events is simulated numerically to study the decay of electron spin polarization in channels of finite width due to the Dyakonov-Perel (DP) mechanism. We have identified different regimes of the spin relaxation in the 2D channels of finite width and established the dependencies of spin relaxation time on the width L and DP parameter ηDP. The most attractive regime for future spintronic applications is the regime of the suppressed spin relaxation with the relaxation time τS scaling as L—2.
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