The electrical transport properties of In2Se3 are investigated. An attempt is made to elucidate the confusion concerning structure and polymorphism. Secondly measurements are made in high temperature range (α-β transition) and low temperature range on annealed and quenched samples. An unusual temperature dependence of the mobility is found that might be attributed to the defective structure of the stoichiometric vacancies in the cationic sublattice. The post-preparation annealing effect is also studied in detail and the difference is reported between an annealed and quenched-annealed sample.
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Julien et al. (1985) studied this question.
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