The effects of reversed-bias application on current-voltage and luminance-voltage characteristics of standard-type double-layer organic light emitting diodes [OLEDs], ITO/TPD(50 nm)/Alq3(50 nm)/Mg:Ag, were investigated. Both the magnitude of reversed-bias and the duration of reversed-bias application were systematically changed. Evident voltage shifts towards the lower voltage side in current-voltage and luminance-voltage characteristics were observed in the diodes which were treated under various reversed-bias condition. The longer the duration of reversed-bias application, the larger the voltage shift was. A maximum voltage shift of 0.7 V was observed in the diode treated under a -10 V bias for 3 h. Little change in luminance-current density relationships was observed for diodes which were treated under various reversed-bias conditions. The results were interpreted in terms of the movement of ionic impurities and orientational rearrangements of permanent dipoles in organic layers.
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Zou et al. (1998) studied this question.
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