A study of morphology control is conducted on 4H SiC Si- and C-face epilayers grown in a chimney CVD reactor. The macroscopic step-bunching and the defect evolution processes with increasing epilayer thickness are investigated in order to achieve smooth surface morphology for thick epilayers of 30 - 120 mum. The growth temperature and input precursor concentrations are observed to have strong impact on the surface morphology.
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Zhang et al. (2000) studied this question.