X-point deformation potentials of III-V semiconductors in a tight-binding approach

The hydrostatic E₁ and shear E₂ deformation potentials of the III-V semiconductor compounds are calculated within a nearest-neighbor tight-binding approach. In the sp³{s}*$ parametrization, analytical expressions for both ${E}₁$ and ${E}₂$ are derived. The scaling law of the ${s}*$p interaction is modified in such a way that it provides deformation potentials at X in reasonable agreement with available experimental data. This phenomenological term takes into account the physical behavior of the actual excited states under strain and consequently, it allows us to describe accurately the dependence of the band-edge states under (001) biaxial strain.