Thermal Expansion Coefficient of Boron Monophosphide

Thermal expansion of BP epitaxially-grown on Si{111} and Si{100} substrates has been investigated by using a high-temperature X-ray diffractometer. The coefficient α varies from (4.0±0.3) × 10 -6 to (6.2±0.3) × 10 -6 K -1 in the tempeature range of 400–800 K. The unit-cell dimension of BP on Si{111} is about 0.1 % larger than that of BP on Si{100}.