Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots

We have investigated Zeeman splitting in single self-assembled InAs and InGaAs quantum dots experimentally and theoretically. By measuring photoluminescence from single dots, in a wide spectral region, we have obtained the exciton g factors of quantum dots with various photoluminescence energies. We find that the absolute value of the exciton g factors of InAs dots are smaller than those of the InGaAs dots, which differs from the composition dependence expected from that of the bulk ones. The experimentally obtained g factors are compared with calculated ones based on the eight-band k∙p model where the influence of strain and the Zeeman effect are included. We find a good agreement between the calculation and the experiment qualitatively and quantitatively. The calculation reproduces the nontrivial composition dependence of the g factor of the quantum dots. In addition, the eight-band model predicts a size and shape dependence of the electron and hole g factors of the pyramidal quantum dots.