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We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110 °C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.
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Skromme et al. (1995) studied this question.
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