Comparison of the Properties of Molybdenum Silicide Films Deposited by D‐C Magnetron and RF Diode Co‐Deposition

We report a preliminary study in which the physical and electrical properties of d‐c magnetron and co‐deposited rf diode molybdenum silicide films of varying stoichiometry are compared. It is shown that the d‐c magnetron films deposited from a composite target tend to be non‐optimal in comparison to the rf diode co‐deposited films of the same stoichiometry. Extensive degradation of the d‐c magnetron films was frequently observed during heat‐treatment at 1000°C in nitrogen or argon ambient. The rf diode films, however, appear to withstand heat‐treatment without signs of degradation. There appear to be significant differences in film stress changes during heat‐treatment, i.e. , the d‐c magnetron films exhibit a severe change in stress level resulting in a highly tensile state which causes film cracking and loss of adhesion, whereas the rf diode co‐deposited film stress changes to minimal values during heat‐treatment. Additional data on crystal morphology, resistivity change during heat‐treatment, and general film properties are also discussed.