Tailoring n-V2O5/p-Si Vis-NIR photoresponsive behavior via tuned laser fluence

In this article, a tunable optoelectrical performance of n-V 2 O 5 /p-Si Vis-NIR heterostructure is precisely tailored via controlled laser fluence variation using pulsed laser deposition (PLD) technique. The microstructural features revealed an increase in the nanoparticle diameter from 30.22 to 35.87 nm as the laser fluence increased from 4.46 to 7.00 J/cm 2 . Further, the fabricated photodetectors demonstrated an enhanced rectification ratios from 33.4 to 36.2 with a reduced ideality factor ( n ), respectively; these observations indicate improved charge-transport pathways and suppressed trap-assisted recombination. The wavelength-dependent investigation showed peak responsivities ( R λ ) of 0.138 and 0.112 A/W at 530 and 808 nm, respectively, while relatively lower R λ values were attained at lower applied fluence values. A reduction trend of figures-of-merit were demonstrated at higher incident light intensities with R λ of 0.060 A/W at 530 nm and 17 mW/cm 2 . The time-based photocarrier dynamics revealed robust operational stability over 14 multiple cycles with rapid response/recover time of 161/165 ms for photodetector attained at 7.00 J/cm 2 .