Critical view of room-temperature topologically enabled material infrared photodetectors

Topological insulators (TIs) are novel quantum materials characterized by an insulating bulk and topologically protected metallic surface states with massless Dirac fermions. This exceptional electronic configuration leads to unique optoelectronic properties and various quantum phenomena. This paper provides a critical assessment of the current state of the art and the performance of infrared photodetectors made from topological materials operating at room temperature. In the initial two sections, the fundamental physical properties of these materials and different preparation techniques for their fabrication are briefly described. The next two sections constitute the most important part of the paper, covering detector structures and their performance. The second of these sections compares the performance of topological photodetectors with that of standard detectors that dominate the global market. The challenge of creating high-quality topological materials, and in particular the problem of eliminating mixing between bulk and topological surface states, has a detrimental effect on detector control performance (dark current density, current responsivity, detectivity, and response time). Topological materials used in photodetection technologies have significant potential for a range of applications, yet considerable challenges must be addressed to fully realize their unique properties. The successful commercialization of these technologies will rely not only on the effectiveness of individual detectors but also on the ability to produce large volumes of high-quality materials affordably. A major challenge lies in the controlled production of topological materials, which directly impacts performance and consistency. One of the main goals is to achieve large-scale integration of materials with existing photonic and electronic systems, including CMOS technology. This integration is expected to enhance chip functionality by combining CMOS silicon with innovative materials. However, ongoing technological advancements often create inconsistencies in pixel arrays, which are essential for manufacturing. Consequently, the growth of the topological family for optoelectronic applications is likely to be slow.