When MoSi2 films on silicon are exposed to oxidizing ambients, a continuous layer of SiO2 grows on the silicide surface. However, when the presence of oxygen impurities exceeds 2 at. % at the silicon-MoSi2 interface, metal-rich silicide phases form. The coexistence of these phases and the absence of metal oxides are explained by considering both the oxidation kinetics and the ternary phase diagram of the Mo-Si-O system.
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Wakita et al. (1984) studied this question.
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