Direct extraction technique to derive the junction temperature of HBT's under high self-heating bias conditions

A new technique is presented that can directly extract the mean device junction temperature of heterojunction bipolar transistors (HBTs) under high self-heating operating conditions. The method uses three trivial DC measurements of the device where the junction temperature is known to be the same. This paper details the technique and applies it to both closely and widely spaced multi-finger HBT's, and compares the results to methods already known.