Thin film transistors fabricated by in situ growth of SnO2 nanobeltson Au∕Pt electrodes

Thin film transistors are fabricated by in situ growth of SnO2 nanobelts on Au∕Pt electrodes. A linear correlation in the output characteristics is observed at zero gate voltage, indicating Ohmic contacts between the nanobelts and the electrodes. The transistors exhibit n-type behaviors and have a mobility of 1.85cm2∕Vs with a current on∕off ratio above 103. The conductance increases as the pressure in the device chamber is reduced, which indicates that the transistors are promising for oxygen detecting.