Self-assembly of metallic double-dot single-electron device

We present an approach that allows forming a nanometric double dot single electron device. It uses chemical synthesis of metallic nanoparticles to form dimeric structures, e-beam lithography to define electrodes and gates, and electrostatic trapping to place the dimers in between the electrodes. We demonstrate a control of its charge configuration and conductance properties over a wide range of external voltages. This approach can be straightforwardly generalized to other material systems and may allow realizing quantum information devices.