New Anionic Photoacid Generator Bound Polymer Resists for EUV Lithography

A new series of functionalized anionic photoacid generators (PAGs) [methacrylate substituted benzene sulfonic PAGs (such as, NO2 PAG, CF3 PAG, and F4 FAG as reference)] and perfluoro alkanesulfonic PAG (MTFB PAG), as well as corresponding PAG bound polymeric resists (HS-EA-PAG) based on hydroxystyrene (HS) and 2-ethyl-2-adamantyl methacrylate (EA), were prepared and characterized. The acid generating efficiency of PAG bound polymers was in the range of 54−81%, which agrees well with the electron withdrawing effect of the substituents. With regard to the referenced F4 PAG bound polymer with 68% acid generating efficiency and our previously reported EUVL results of F4 PAG bound polymer photoresists, these new PAG bound polymers should be effective resists for EUV lithography.