Measurements on Local Variations in Spacing and Orientation of the Lattice Plane of Silicon Single Crystals by X-Ray Double-Crystal Topography

A method of measuring the local variations in the spacing and the orientation of a lattice plane in a single crystal is reported. The angular positions of diffraction peak at each point of the specimen are measured at four incident azimuths making 90° to each other by a double-crystal spectrometer. This method is applied to two specimens of silicon single crystals doped with arsenic and containing oxygen respectively. The growth striations observed in the two specimens are for the most part due to the variation in lattice spacing. The intensity contrast extended in the long range is due to misorientation.