We report the clearly observed tunneling magnetoresistance at 5 K in magnetic tunnel junctions with Co-doped ZnO as a bottom ferromagnetic electrode and Co as a top ferromagnetic electrode prepared by pulsed laser deposition. Spin-polarized electrons were injected from Co-doped ZnO to the crystallized Al2O3 and tunnelled through the amorphous Al2O3 barrier. Our studies demonstrate the spin polarization in Co-doped ZnO and its possible application in future ZnO-based spintronics devices.
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Xu et al. (2008) studied this question.
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