A Fully-Integrated Low Power K-band Radar Transceiver in 130nm CMOS Technology

A fully-integrated low power K-band radar transceiver in 130 ㎚ CMOS process is presented. It consists of a low-noise amplifier (LNA), a downconversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 ㏈. The LNA achieves a power gain of 15 ㏈ and noise figure of 5.4 ㏈, and the PA has an output power of 9 ㏈m. The phase noise of VCO is -90 ㏈c/㎐ at 1-㎒ offset. The total dc power dissipation of the transceiver is 142 ㎽ and the size of the chip is only 1.2 × 1.4 ㎟.